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The external potential difference applied to p-n junction in case of forward biased situation must be greater than:

NETNUST Entry TestPhysicsElectronics

In a p-n junction, the current flows due to:

NETNUST Entry TestPhysicsElectronics

A potential barrier of 0.7 V exists across p-n junction made from:

NETNUST Entry TestPhysicsElectronics

The potential barrier across the depletion region in case of silicon and germanium are respectively:

NETNUST Entry TestPhysicsElectronics

Potential barrier across the p-n junction:

NETNUST Entry TestPhysicsElectronics

As a result of diffusion, a region is formed around the p-n function which is a:

NETNUST Entry TestPhysicsElectronics

A potential difference is developed across the depletion region of p-n junction due to:

NETNUST Entry TestPhysicsElectronics

Depletion region contains:

NETNUST Entry TestPhysicsElectronics

Depletion region is the region around the p-n junction and:

NETNUST Entry TestPhysicsElectronics

A hole in p-type may be due to:

NETNUST Entry TestPhysicsElectronics

When phosphorus is added as an impurity in germanium, there is an increase in:

NETNUST Entry TestPhysicsElectronics

The impurity in the germanium is usually in the ratio of:

NETNUST Entry TestPhysicsElectronics

Whenever a covalent bond breaks, it creates:

NETNUST Entry TestPhysicsElectronics

Majority charge carriers in the p-region of p-n junction are:

NETNUST Entry TestPhysicsElectronics

A p-type crystal is:

NETNUST Entry TestPhysicsElectronics

An outer most orbit represents stable configuration if it possesses:

NETNUST Entry TestPhysicsElectronics

All the valence electrons present in a crystal of silicon are bound in their orbits by:

NETNUST Entry TestPhysicsElectronics

Atomic number of germanium atom and number of valence electrons in it are respectively:

NETNUST Entry TestPhysicsElectronics

At room temperature, crystal of germanium, in its pure form, act as:

NETNUST Entry TestPhysicsElectronics

Crystal of germanium or silicon in its pure form at absolute zero acts as:

NETNUST Entry TestPhysicsElectronics

The use of chips in electrons is described in the form of:

NETNUST Entry TestPhysicsElectronics

The huge advances in electronics over the recent past are due to discovery and use of:

NETNUST Entry TestPhysicsElectronics

Silicon is one of the most commonly used:

NETNUST Entry TestPhysicsElectronics

Computer chips are made from:

NETNUST Entry TestPhysicsElectronics

An emf can be induced in a coil:

NETNUST Entry TestPhysicsElectromagnetic Induction